Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO₂ Using Defect Nanospectroscopy

Random telegraph noise (RTN) is often considered a nuisance or, more critically, key reliability challenge for miniaturized semiconductor devices. However, this picture gradually changing as recent works have shown emerging applications based on the inherent randomness of RTN signals in state-of-the-art technologies, including true random number generator and IoT hardware security. Suitable material platforms device architectures are now actively explored to bring these technologies from an embryonic stage practical application. A devise systems, which can be reliably used deterministic creation localized defects generation. Toward goal, we investigated Au nanocrystal (Au-NC) embedded HfO2 stacks at nanoscale by combining conduction atomic force microscopy defect spectroscopy statistical factorial hidden Markov model analysis. With voltage applied across stack, there enhanced asymmetric electric field surrounding Au-NC. This turn leads preferential generation near Au-NC when stack induce dielectric breakdown. Since arises various electrostatic interactions between closely spaced defects, system exhibits intrinsic ability generate signals. Our results also highlight that spatial confinement multiple resulting provides dynamic environment leading many complex patterns addition presence standard two-level The insights obtained useful optimize metal high-κ circuits on-demand applications.